10.4121/17209091.v1

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Data underlying the publication: A high-mobility hole bilayer in a germanium double quantum well Dataset

Alberto Tosato, Beatrice Ferrari, Amir Sammak, Alexander Hamilton, Menno Veldhorst, Giordano Scappucci,
The repository contains one dataset of experimental data (resistance as a function of gate voltage and magnetic field) for a tunnel coupled bilayer in Ge/SiGe heterostructure. The repository also contains one dataset with Schrodinger-Poisson simulations of the measured device. All data analysis and plots presented in the paper are included in 3 Jupyter notebooks.

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